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Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors

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7 Author(s)
Kian-Ming Tan ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Wei-Wei Fang ; Yang, Mingchu ; Tsung-Yang Liow
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We report the first demonstration of a p-channel multiple-gate (trigate) FinFET with a liner stressor comprising diamond-like carbon (DLC) film. We also report on the detailed process that enables the adhesion of DLC with ultrahigh compressive stress on the three-dimension topology of the FinFET structure. The intrinsic compressive stress for the DLC film is 6 GPa, the highest ever reported for a liner stressor formed over a multiple-gate device structure or FinFET. A high stress-thickness product was successfully realized without film delamination. This leads to a very significant drive current boost for the FinFET with DLC liner stressor as compared to a control FinFET without the DLC liner.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )

Date of Publication:

July 2008

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