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Low Turn-On Voltage and High-Current \hbox {InP}/ \hbox {In}_{0.37}\hbox {Ga}_{0.63}\hbox {As}_{0.89}\hbox {Sb}_{0.11}/\hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As} Double Heterojunction Bipolar Transistors

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5 Author(s)
Shu-Han Chen ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli ; Kuo-Hung Teng ; Hsin-Yuan Chen ; Sheng-Yu Wang
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We report on the dc and microwave characteristics of an InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In0.37Ga0.63As0.89Sb0.11 base reduces the conduction band offset DeltaEC at the emitter/base junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm2. A current gain of 125 and a peak fT of 238 GHz have been obtained on the devices with an emitter size of 1times10 mum2, suggesting that a high collector average velocity and a high current capability are achieved due to the type-II lineup at the InGaAsSb/InGaAs base/collector junction.

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IEEE Electron Device Letters  (Volume:29 ,  Issue: 7 )