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ZnO Thin-Film Transistor Ring Oscillators with 31-ns Propagation Delay

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10 Author(s)
Jie Sun ; Dept. of Electr. Eng., Penn State Univ., University Park, PA ; Mourey, D.A. ; Dalong Zhao ; Sung Kyu Park
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We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200degC). Bottom-gate thin-film transistors with aluminum source and drain contacts were fabricated with a field-effect mobility of > 15 cm2/V ldr s. Seven-stage ROs operated at a frequency as high as 2.3 MHz for a supply voltage of 25 V, corresponding to a propagation delay of 31 ns/stage. These circuits also had propagation delays of ~100 ns/stage at a supply voltage of 15 V. To the best of our knowledge, these are the fastest ZnO circuits reported to date.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )