A practical approach to fabricate textured GaN-based light-emitting diodes (LEDs) by nanosphere lithography is presented. By spin coating a monolayer of SiO2 nanoparticles as the mask, textured LEDs can be fabricated. Both textured p-GaN and textured indium tin oxide LEDs show significant improvement over conventional LEDs without damaging the electrical characteristics. The results show that the method is promising for manufacturing low-cost high-efficient GaN-based LEDs.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
7
)
Date of Publication: July 2008
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