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Improvement of External Extraction Efficiency in GaN-Based LEDs by  \hbox {SiO}_{2} Nanosphere Lithography

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13 Author(s)
Min Yann Hsieh ; Grad. Inst. of Photonics & Optoelectron. & the Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; Cheng Yin Wang ; Liang Yi Chen ; Tzu Pu Lin
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A practical approach to fabricate textured GaN-based light-emitting diodes (LEDs) by nanosphere lithography is presented. By spin coating a monolayer of SiO2 nanoparticles as the mask, textured LEDs can be fabricated. Both textured p-GaN and textured indium tin oxide LEDs show significant improvement over conventional LEDs without damaging the electrical characteristics. The results show that the method is promising for manufacturing low-cost high-efficient GaN-based LEDs.

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Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )