Cart (Loading....) | Create Account
Close category search window
 

Investigation of Reliability Characteristics in NMOS and PMOS FinFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

Three-dimensional vertical double-gate (FinFET) devices with a high aspect ratio (Si-fin height/width = Hfin/Wfin = 86 nm/17 nm) and a gate nitrided oxide of 14 Aring thickness have been successfully fabricated. Reliability characterizations, including hot-carrier injection (HCI) for NMOS FinFETs and negative bias temperature instability (NBTI) for PMOS FinFETs, are carried out in order to determine their respective lifetimes. The predicted HCI dc lifetime for a 50-nm gate-length NMOS FinFET device at the normal operating voltage (Vcc) of 1.1 V is 133 years. A wider fin-width (27 nm) PMOS FinFET exhibits promising NBTI lifetime such as 26.84 years operating at Vcc = 1.1 V, whereas lifetime is degraded for a narrower fin-width (17 nm) device that yields 2.76 years of lifetime at the same operating voltage and stress conditions.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )

Date of Publication:

July 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.