Referenced Items are not available for this document.
The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 nm. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
7
)
Date of Publication: July 2008
- Page(s):
- 811 - 813
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10160323
- Digital Object Identifier :
- 10.1109/LED.2008.2000713
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 July 2008
- Issue Date :
- July 2008
- Sponsored by :
- IEEE Electron Devices Society
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