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Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors

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7 Author(s)
Tsung-Yang Liow ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Kian-Ming Tan ; Lee, R. ; Ming Zhu
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Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% IDsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )