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Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly( o -anthranilic acid) Thin Films

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4 Author(s)
Dongjin Lee ; Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang ; Sungsik Baek ; Moonhor Ree ; Ohyun Kim

We investigated the effect of the electrode material on the electrical-switching characteristics (i.e., electrical-switching behavior, switching voltage, and on/off current ratio) of a nonvolatile resistive-memory device based on an active poly(o-anthranilic acid) thin film. The switching characteristics of the active polymer layer were found to depend strongly on the bottom-electrode (BE) material. Depending on which material was used, the devices exhibited two different switching behaviors, namely, a polarity-dependent and a polarity-independent one. The polarity-independent switching behavior was particularly observed in devices fabricated with an aluminum BE, which can be attributed to the formation of a native oxide layer on this substrate.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )