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A Novel Multiple-Gate Polycrystalline Silicon Nanowire Transistor Featuring an Inverse-T Gate

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4 Author(s)
Lin, Horng‐Chih ; Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu ; Hsing-Hui Hsu ; Chun-Jung Su ; Tiao-Yuan Huang

A novel multiple-gate field-effect transistor with poly-Si nanowire (NW) channels is proposed and fabricated using a simple process flow. In the proposed structure, poly-Si NW channels are formed with sidewall spacer etching technique, and are surrounded by an inverse-T gate and a top gate. When the two gates are connected together to drive the NW channels, dramatic performance enhancement as compared with the cases of single- gate operation is observed. Moreover, subthreshold swing as low as 103 mV/dec at Vd = 2 V is recorded. Function of using the top gate bias to modulate the threshold voltage of device operation driven by the inverse-T gate biases is also investigated in this letter.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )