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Analysis and Modeling of Threshold Voltage Mismatch for CMOS at 65 nm and Beyond

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3 Author(s)
Johnson, J.B. ; Semicond. R&D Center, IBM Microelectron., Essex Junction, VT ; Hook, T.B. ; Yoo-Mi Lee

This letter investigates random dopant fluctuation transistor mismatch. The dominance of the halo implant is demonstrated experimentally and with simulation, and a compact model form is developed for improved representation of the phenomenon.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )