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Analysis and Modeling of Threshold Voltage Mismatch for CMOS at 65 nm and Beyond

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3 Author(s)
Jeffrey B. Johnson ; Semicond. R&D Center, IBM Microelectron., Essex Junction, VT ; Terence B. Hook ; Yoo-Mi Lee

This letter investigates random dopant fluctuation transistor mismatch. The dominance of the halo implant is demonstrated experimentally and with simulation, and a compact model form is developed for improved representation of the phenomenon.

Published in:

IEEE Electron Device Letters  (Volume:29 ,  Issue: 7 )