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Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface

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4 Author(s)
Li Geng ; Dept. of Microelectron., Xi'an Jiaotong Univ., Xian ; Blanka Magyari-Kope ; Zhiyong Zhang ; Yoshio Nishi

The mechanism of Schottky-barrier height (SBH) tuning by yttrium (Y) segregated at nickel silicide (NiSi2)/silicon interface is investigated based on first-principle calculations. SBH modification can be explained by a new chemical structure that forms when Y atoms substitute silicon atoms near the interface. Silicon dangling bonds are saturated, leading to a new pinning-free interfacial structure. When other layers of Y atoms are segregated in , SBH for electrons can be reduced from 0.65 to 0.1 eV. The previously reported experimental phenomena can be explained by the calculations.

Published in:

IEEE Electron Device Letters  (Volume:29 ,  Issue: 7 )