Referenced Items are not available for this document.
Recently, we reported significantly improved spatial resolution in scanning spreading resistance microscopy (SSRM) by measuring in a vacuum. In this paper, we demonstrate the 1-nm spatial resolution of SSRM in carrier profiling by comparing with the 3-D device simulation. The simulation results show that the accuracy of ultrashallow-junction delineation depends on the effective radius of the probe. The precisely measured junction depth corresponds to an effective probe radius of 0.5 nm. We attribute the high resolution to the elimination of parasitic resistances of the whole measuring circuit. Application to failure analysis of n-type metal-oxide-semiconductor field-effect transistors clarified the impact of halo-carrier profiles on Vth-roll-off characteristics.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
7
)
Date of Publication: July 2008
- Page(s):
- 799 - 801
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10160320
- Digital Object Identifier :
- 10.1109/LED.2008.2000644
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 July 2008
- Issue Date :
- July 2008
- Sponsored by :
- IEEE Electron Devices Society
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