Referenced Items are not available for this document.
This letter reports normally-off operation of an AlGaN/GaN recessed MIS-gate heterostructure field-effect transistor with a high threshold voltage. The GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows us to achieve the high threshold voltage, whereas the low on-state resistance is maintained by the 2-D electron gas remaining in the channel except for the recessed MIS-gate region. The fabricated device exhibits a threshold voltage as high as 5.2 V with a maximum field-effect mobility of 120 cm2/Vmiddots, a maximum drain current of over 200 mA/mm, and a breakdown voltage of 400 V.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
7
)
Date of Publication: July 2008
- Page(s):
- 668 - 670
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10132867
- Digital Object Identifier :
- 10.1109/LED.2008.2000607
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 July 2008
- Issue Date :
- July 2008
- Sponsored by :
- IEEE Electron Devices Society
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