Cart (Loading....) | Create Account
Close category search window
 

Forming Gas Annealing Characteristics of Germanium-on-Insulator Substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hai-Yan Jin ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA ; Cheung, Nathan W.

Large-area layer transfer of germanium-on-insulator (GeOI) substrates has been fabricated by ion-cut processes. Pseudo-MOSFET structure was employed to characterize interface trap density, interface fixed charge density, interface carrier mobility, and bulk carrier mobility of these GeOI substrates with various annealing conditions in forming gas ambient. High-temperature annealing in the vicinity of 500degC-600degC has shown the best carrier mobilities, with the interface trap density and the interface fixed charge density as low as 1010 q/cm2. The extracted bulk hole mobility of the annealed GeOI is near 500 cm2/( V middots), which is higher than that of silicon [300 cm2/(V middots)] at the same doping concentration level.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )

Date of Publication:

July 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.