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Low Standby Power and Robust FinFET Based SRAM Design

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3 Author(s)
Behzad Ebrahimi ; Nanoelectron. Center of Excellence, Univ. of Tehran, Tehran ; Saeed Zeinolabedinzadeh ; Ali Afzali-Kusha

In this paper, we propose low power and robust 6T SRAM cells. The cells are based on the Vt-control of the cross-coupled inverters of the SRAM cell to reduce leakage power when SRAM is in the idle mode. Using the Vt-control method along with the built-in feedback leads to increasing the SNM. In comparison to a previous work, our schemes have a higher static noise margin (SNM) and lower standby power consumption. To assess the efficiency of the approach, HSPICE simulations in 45 nm and 32 nm FinFET technologies are used. The results show considerable improvements in terms of the standby power as well as the hold and read SNM. This suggests that the Vt-control method may be used for realizing low-standby power and robust SRAM.

Published in:

2008 IEEE Computer Society Annual Symposium on VLSI

Date of Conference:

7-9 April 2008