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Using Temperature as Observable of the Frequency Response of RF CMOS Amplifiers

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11 Author(s)
Aldrete-Vidrio, E. ; Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona ; Salhi, M.A. ; Altet, J. ; Grauby, S.
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The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer.

Published in:

Test Symposium, 2008 13th European

Date of Conference:

25-29 May 2008