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A High Power, High Efficiency Amplifier using GaN HEMT

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3 Author(s)
Bumjin Kim ; Electr. Eng. Dept., California Polytech. State Univ., San Luis, CA ; Derickson, D. ; Sun, C.

A class B and a class F power amplifier are described using a GaN HEMT device. They both were designed to operate at a frequency of 1.7 GHz with the same bias conditions. The performances of each amplifier were successfully simulated and compared. A class B amplifier was physically implemented and achieved a high power-added-efficiency of 69.2%, 39.9 dBm output power and associated gain of 14.9 dB. The experimental results were in close agreement to the simulation results.

Published in:

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Date of Conference:

11-14 Dec. 2007

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