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Dielectric Discharging processes in RF-MEMS Capacitive Switches

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4 Author(s)
George Papaioannou ; Solid State Physics Section, Physics Dpt., National Kapodistrian University of Athens, Athens, Greece. gpapaioan@phys.uoa.gr ; Eleni Papandreou ; John Papapolymerou ; Richard Daigler

The discharging processes in silicon nitride dielectric film of RF-MEMS capacitive switches are investigated for the first time. The study includes the dependence of discharging as a function of temperature that allows the detection of thermally activated mechanisms. The discharging time constants were found to depend only on temperature and not on the actuation bias polarity.

Published in:

2007 Asia-Pacific Microwave Conference

Date of Conference:

11-14 Dec. 2007