Skip to Main Content
The discharging processes in silicon nitride dielectric film of RF-MEMS capacitive switches are investigated for the first time. The study includes the dependence of discharging as a function of temperature that allows the detection of thermally activated mechanisms. The discharging time constants were found to depend only on temperature and not on the actuation bias polarity.
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Date of Conference: 11-14 Dec. 2007