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High Performance InGaAs PIN Photodetector

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4 Author(s)
Yung-Sheng Wang ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan ; Shoou-Jinn Chang ; Chiou, Y. ; Wei Lin

In this paper, high quality InGaAs PIN photodetector prepared on S-doped InP substrate by metal organic chemical vapor deposition (MOCVD) are investigated. With a absorption layer of 2.8 mum and a photosensitive diameter window of 60 mum at reverse bias of 5V, dark current of 105 pA, capacitance of 0.475 pF, and the optical responsivities of 0.76 AAV and 1.17A/W, and the detectivities (D*) of 3.69><1012cmHz05W-1 and 5.6x1012cmHz05W-1, have been determined at 131 mum and 155 mum, respectively. Moreover, the 3-dB bandwidth of photodetector was estimated to be 6.7 GHz.

Published in:

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Date of Conference:

11-14 Dec. 2007