Referenced Items are not available for this document.
A design methodology to optimise the ratio of maximum oscillation frequency to cutoff frequency, f MAX/f T, in 60 nm FinFETs is presented. Results show that 25 to 60 improvement in f MAX/f T at drain currents of 20-300 muA/mum can be achieved in a non-overlap gate-source/drain architecture. The reported work provides new insights into the design and optimisation of nanoscale FinFETs for RF applications.
Published in:
Electronics Letters
(Volume:44
,
Issue:
13
)
Date of Publication: June 19 2008
- Page(s):
- 825 - 827
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 10030304
- Digital Object Identifier :
- 10.1049/el:20080696
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 27 June 2008
- Issue Date :
- June 19 2008
- Sponsored by :
- Institution of Engineering and Technology
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