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A design methodology to optimise the ratio of maximum oscillation frequency to cutoff frequency, f MAX/f T, in 60 nm FinFETs is presented. Results show that 25 to 60 improvement in f MAX/f T at drain currents of 20-300 muA/mum can be achieved in a non-overlap gate-source/drain architecture. The reported work provides new insights into the design and optimisation of nanoscale FinFETs for RF applications.
Date of Publication: June 19 2008