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Organic light-emitting device with surface-modified tungsten-doped indium oxide anode

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5 Author(s)
Li, G.F. ; Dept. of Mater. Sci., Fudan Univ., Shanghai ; Zhang, Q. ; Yu, F. ; Liu, C.
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The work function of tungsten-doped indium oxide (IWO) thin films could be enhanced to 5.5 eV by forming platinum and tungsten codoped indium oxide (In2O3:Pt,W) thin layers on them. With the IWO/In2O3:Pt,W double-layer as the anode, an OLED device with the structure of IWO/In2O3:Pt,W/NPB/Alq3/LiF/Al was fabricated. When the voltage is 14 V, the current density and the brightness of the device reach 1600 mA/cm2 and 2.5times104 cd/m2, respectively.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 13 )