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A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

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3 Author(s)
Yanyu Jin ; Electron. Res. Lab./DIMES, Delft Univ. of Technol., Delft ; Sanduleanu, M.A.T. ; Long, J.R.

A millimeter-wave power amplifier fabricated in 90 nm bulk CMOS technology consists of 3 identical cascode stages and on-chip matching networks (inter-stage, input, and output) implemented with wide-gap coplanar waveguides and M6-M5 (MIM) capacitors. The amplifier realizes a linear power gain of 19.7 dB at 52.4 GHz and 10.3 dB at 60 GHz. Maximum saturated output power and output-referred compression point are and 3.1 dBm, respectively. Peak PAE is 4.2%. The 1.180.96 die consumes 75 mA when operating from a 2 V supply.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:43 ,  Issue: 7 )

Date of Publication:

July 2008

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