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A millimeter-wave power amplifier fabricated in 90 nm bulk CMOS technology consists of 3 identical cascode stages and on-chip matching networks (inter-stage, input, and output) implemented with wide-gap coplanar waveguides and M6-M5 (MIM) capacitors. The amplifier realizes a linear power gain of 19.7 dB at 52.4 GHz and 10.3 dB at 60 GHz. Maximum saturated output power and output-referred compression point are and 3.1 dBm, respectively. Peak PAE is 4.2%. The 1.180.96 die consumes 75 mA when operating from a 2 V supply.