Cart (Loading....) | Create Account
Close category search window
 

Dark Current Spectroscopy of Irradiated CCD Image Sensors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Tivarus, C. ; Image Sensor Solutions, Eastman Kodak Co., Rochester, NY ; McColgin, W.C.

Dark current spectroscopy is used to directly investigate deep-level traps induced by alpha particle irradiation in charge-coupled devices, at trap concentrations as low as ~2 times 107 cm-3. The irradiated devices have long dark current histogram tails that are quantized at long imager integration times. This quantization is due to the discrete nature of the distribution of the radiation-induced traps within the device pixels. Four distinct traps, with different dark current generation rates, are found and characterized in terms of their activation energies and capture cross-sections. Two of the traps, identified as the divacancy and the E-center (phosphorus-vacancy), have the highest concentrations and generation rates and are the main constituents of the irradiation tails. The origin of these irradiation tails is explained as a superposition of peaks formed by pixels that contain from a single deep-level trap to multiple traps of the same or different types. Divacancy annealing is shown to result in the formation of four additional traps, which are tentatively attributed to vacancy-oxygen, vacancy-hydrogen, and high-order silicon-vacancy complexes.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:55 ,  Issue: 3 )

Date of Publication:

June 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.