By Topic

Proton Radiation Effects on MEMS Silicon Strain Gauges

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Damian G. Marinaro ; Defence Sci. & Technol. Organ., Port Melbourne, VIC ; Phillip McMahon ; Alan Wilson

A microelectromechanical system (MEMS) strain gauge constructed from single-crystalline silicon has been developed for application in aircraft structural-health-monitoring. The effects of proton irradiation on the piezoresistive elements of the silicon strain gauges are examined. Degradation in the piezoresistive response at applied strains above 2000 microstrain is observed.

Published in:

IEEE Transactions on Nuclear Science  (Volume:55 ,  Issue: 3 )