By Topic

Microwatt MOSLED Using {\hbox {SiO}}_{\rm x} With Buried Si Nanocrystals on Si Nano-Pillar Array

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Gong-Ru Lin ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; Yi-Hao Pai ; Cheng-Tao Lin

Microwatt light emission from a metal-oxide-semiconductor light-emitting diode (MOSLED) made by using SiOx film with buried Si nanocrystals on Si nano-pillar array is demonstrated. The Si nano-pillar array obtained by drying the rapidly self-aggregated Ni nano-dot-masked Si substrate exhibit size, aspect ratio, and density of 30 nm, 10, and 2.8times1010 cm-2, respectively. These high-aspect-ratio Si nano-pillar array helps to enhance the Fowler-Nordheim tunneling-based carrier injection and to facilitate the complete relaxation on total internal reflection, thus increasing the quantum efficiency by one order of magnitude and improving the light extraction from the nano-roughened device surface by three times at least. The light-emission intensity, turn-on current and power-current slope of the MOSLED are 0.2 mW/cm2 , 20-30 muA, and 3plusmn0.5 mW/A, respectively. At a biased current of 400 muA, the highest external quantum efficiency is over 0.2% to obtain the maximum EL power of > 1 muW. Compared with the same device made on smooth Si substrate under a power conversion ratio of 1 times 10-4 , such an output power performance is enhanced by at least one order of magnitude.

Published in:

Journal of Lightwave Technology  (Volume:26 ,  Issue: 11 )