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Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exposed to high energy neutrons

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7 Author(s)
Janousek, B.K. ; Aerosp. Corp., Los Angeles, CA, USA ; Krantz, R.J. ; Bloss, W.L. ; Yamada, W.E.
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GaAs heterojunction field-effect transistors (HFETs) and inverters and ring oscillators comprising HFETs have been exposed to neutron fluences of 5×1013 n/cm2 to 1×1015 n/cm2 to evaluate the characteristics of HFET integrated circuits in a high-energy-neutron environment. The HFETs exhibited preirradiation transconductances of approximately 120 mS/mm and threshold voltages of -0.82 V. The degree of transconductance degradation is similar to that observed in ion-implanted GaAs MESFETs, but the magnitude of the HFET threshold shift is significantly smaller. The neutron-induced threshold shift in GaAs HFETs has been modeled, including the effect of pinning the Fermi level at the semi-insulating boundary. Neutron bombardment of source-follower FET logic (SFFL) inverters and ring oscillators results in a reduction in high noise margin and an increase in low noise margin with 35% reduction in ring oscillator frequency at 1×1015 n/cm2. These results indicate that more complex HFET SFFL circuits should remain functional at high neutron fluences

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Nuclear Science, IEEE Transactions on  (Volume:36 ,  Issue: 6 )