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High Q-factor monolithic inductor for RF devices using double ground shield

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3 Author(s)
Lagoia Fonseca ; School of Electrical and Computer Engineering - FEEC, Department of Microwave and Optics - DMO, University of Campinas - UNICAMP, SP, 13082-970, Brazil ; P. N. Kretly ; L. C. Kretly

This paper presents a technique to improve RF integrated inductor performance, incorporating double ground shield using polysilicon and n+ buried layer, providing a fully shield and preventing the electric field penetration. This method was compared with conventional inductors, patterned ground shield, double ground shielding using polysilicon inductors, and improves Q-factor up to 50% at 3.5, 4 and 5 GHz. The results were obtained based on AMS 0.35 mum BiCMOS technology. This technique can be applied to any BiCMOS technology without any additional process.

Published in:

2008 7th International Caribbean Conference on Devices, Circuits and Systems

Date of Conference:

28-30 April 2008