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ELO SOI technology for radiation hard devices

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4 Author(s)
Liu, S.T. ; Honeywell Inc., Plymouth, MN, USA ; Lai, J. ; Fechner, P. ; Holt, M.

It is demonstrated experimentally that thin SOI structures with a predetermined oxide pattern can be made by ELO (epitaxial lateral overgrowth) technology and etchback. It is also demonstrated experimentally that these ELO SOI structures can support MOS devices to a reasonably high level of radiation. At a total dose of 106 rad(SiO2), the threshold voltage shift was only -0.17 V, the subthreshold slope change was only 16 mV/decade, and degradation of saturated transconductance was only 4%. At 1×107 rad(SiO2), the threshold voltage shift was -0.25 V, the subthreshold slope change was 50 mV/decade, and degradation of saturated transconductance was 18%. This degradation and hence degradation of the device performance at high total dose is due to interface state buildup as a result of irradiation

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Nuclear Science, IEEE Transactions on  (Volume:36 ,  Issue: 6 )