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The CMOS integrated 3-GHz to 11-GHz transmitter for full-band UWB applications is proposed and designed in 0.13-mum CMOS technology. The designed UWB transmitter is integrated with a 2:1 frequency divider, a quadrature up-conversion mixer, a balanced RF amplifier, and a 3-stage cascaded poly-phase filter. The technique of inductance peaking has been adopted to achieve 14 -band operation for UWB applications. The transmitter has an average conversion gain of 12.8 dB with the gain ripple of around plusmn1.4 dB among the whole frequency band. The average input 1-dB compression point (IP-1dB) of the 14 bands is -12.2 dBm and the average output 1-dB compression point (OP-1dB) of the 14 bands is -0.4 dBm. The transmitter dissipates the power of 53.1 mW from the supply voltage of 1.2 V and occupies the chip area of 1930times1635 mum2. This chip is designed in 0.13-mum 1P8M CMOS technology and under fabrication.