By Topic

High linear voltage references for on-chip CMOS smart temperature sensor from −60°C to 140°C

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Joseph Tso-sheng Tsai ; Department of Communication Engineering, National Chiao Tung University, Hsinchu, Taiwan ; Herming Chiueh

A low-cost and high linear voltage reference circuitry is designed and implemented in TSMC 0.18 mum CMOS technology. Previous research has proposed the use of MOS transistors operated in the weak inversion region to replace the bipolar devices with conventional PTAT (proportional to absolute temperature) circuits. However, such solutions often cause linearity problem in high temperature region because of the current leaking devices in modern deep sub micron and nano-scale CMOS technology. The proposed circuit utilized temperature complementation technique on two voltage references, PTAT and IOAT (independent of absolute temperature) references, to enhance the linearity and produce a stable IOAT voltage reference. Based on the measurement results, the R-square of PTAT reference is better than 0.9 and the temperature coefficient of IOAT reference is 14 ppm/degC in a considerable wider temperature range from -60degC to 140degC. The occupied chip area is 0.00126 mm . Thus, a fully integrated temperature sensor with wider temperature range is designed and easily to integrate to modern system-on-chip designs with minimal efforts.

Published in:

2008 IEEE International Symposium on Circuits and Systems

Date of Conference:

18-21 May 2008