By Topic

Reoxidized nitrided oxide for radiation-hardened MOS devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
G. J. Dunn ; Lincoln Lab., MIT, Lexington, MA, USA ; P. W. Wyatt

A 37-nm reoxidized nitrided oxide has been developed that exhibits zero interface-state density increase, less than -1.5-V midgap voltage shift, and less than 5% degradation in inversion layer mobility after irradiation to 50 Mrad(SiO2) with ±5 V applied to the gate. Bias annealing studies demonstrate that midgap voltage-shift recovery is more rapid than in conventional hardened oxide, indicating that these dielectrics will compare even more favorably with hard oxide at lower dose rates. The experiments also indicate that the density of hole traps in reoxidized nitrided oxide is sharply peaked at both interfaces and that the same species of trap dominates trapping at both interfaces

Published in:

IEEE Transactions on Nuclear Science  (Volume:36 ,  Issue: 6 )