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Radiation effects on p+ poly gate MOS structures with thin oxides

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3 Author(s)
I. Yoshii ; Toshiba Corp., Kawasaki, Japan ; K. Hama ; K. Maeguchi

The effects of radiation on p+ poly gate MOS structures with thin (25-10 nm) oxides are investigated and compared with those on n+ poly gate MOS structures using a high-frequency C-V technique. It is found that the characteristics of the oxide charge buildup and the interface state generation are different for n+ and p+ poly gates. The results indicate that the differences are due to boron atoms penetrating to the gate oxide from the polysilicon gate. On the basis of these observations, a model for the role of boron atoms in the oxide is proposed. In the model, boron atoms in the bulk of the oxide act as electron-hole recombination centers which reduce the number of holes available for trapping, and boron atoms at the interface, which may form B-Si bonds, cause the interface state generation

Published in:

IEEE Transactions on Nuclear Science  (Volume:36 ,  Issue: 6 )