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The effects of ionizing radiation on power-MOSFET termination structures

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6 Author(s)
Davis, K.R. ; Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA ; Schrimpf, R.D. ; Cellier, F.E. ; Galloway, K.F.
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The effects of ionizing radiation on power-MOSFET termination structures were examined through two-dimensional simulation. A wide range of sensitivity to surface-charge density was found for various devices employing floating field rings and/or equipotential field plates. Termination structures that were both insensitive to surface charge and possessed a high breakdown voltage were identified. The results are compared with measurements made on selected structures. Insights into the design of optimum termination structures are obtained

Published in:

Nuclear Science, IEEE Transactions on  (Volume:36 ,  Issue: 6 )

Date of Publication:

Dec 1989

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