By Topic

Analysis of current-mirror MOSFETs for use in total-dose radiation environments

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Martinez, M.J. ; Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA ; Schrimpf, R.D. ; Galloway, K.F.

The suitability of current-mirror MOSFETs (CMFETs) for use in total-dose radiation environments was examined. These devices allow low-loss load-current sensing and have significant potential for use in power integrated circuits. Experiments demonstrated that the ratio of the load current to the sense current was virtually unaffected by ionizing radiation for many operating conditions. In all cases examined, changes in current ratio were largest when the sense resistance was largest, and smallest when the sense voltage was approximately equal to the load-section source voltage. A demonstration circuit was used to verify the feasibility of using feedback to extend the useful life of CMFETs in total-ionizing-dose environments

Published in:

Nuclear Science, IEEE Transactions on  (Volume:36 ,  Issue: 6 )