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Neutron effects in high-power GaAs laser diodes

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2 Author(s)
Carson, R.F. ; Sandia Nat. Lab., Albuquerque, NM, USA ; Chow, W.W.

The radiation response of broad-area GaAs quantum-well laser diodes and arrays that emit up to 2 W from a 100-μm to 150-μm region at the front facet was tested. Results at neutron fluence levels up to 1015 n/cm2 are reported. The lasing threshold currents of these high-power GaAs laser diodes and arrays increased less than 40% after exposure to 1014 n/cm2 . Threshold current rose by 100% to 250%, and a possible increased susceptibility to facet damage was observed at 1015 n/cm2. The results indicate that the mechanisms for degradation are the same as those observed for the older semiconductor laser technologies

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Nuclear Science, IEEE Transactions on  (Volume:36 ,  Issue: 6 )