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Researchment and design of CMOS low noise amplifier in UHF band

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3 Author(s)
Huaqing Xiao ; Electromagn. Inst., Southwest Jiaotong Univ., Chengdu ; Xiangzheng Xiong ; Cheng Liao

To overcome difficulties among power, noise figure(NF) and match in the design of low-noise amplifier(LNA), a novel approach that can realize effective compromise among them is presented through analyzing the cascade LNA configuration. Under the premise that power can be accepted, the new approach can be achieved by adopting series inductors in input port, adding capacitors between gate and source nodes and appending series inductor-resistance to the output port. Experimental results show that, with the proposed approach, a 0.18 mum CMOS LNA at 2.4 GHz could provide a maximum NF of 0.46 dB, a minimum power gain of 22 dB in 3 dB bandwidth, input and output VSWRs which are better than 1.12, the output P1dB power of 1.07 dBm and 25.02 mW whole power consume. Theory analysis agrees well with the simulation results.

Published in:

Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on  (Volume:1 )

Date of Conference:

21-24 April 2008