Skip to Main Content
The design of two critical building blocks for the realization of an all-integrated transceiver, the power amplifier (PA) and the transmit/receive switch (T/R switch), using a 130-nm CMOS process will be presented. The PA operating from a 2.5-V supply exhibits an output referred P1dB of 9.0 dB, a PSAT of+13.1 dBm, with peak power gain of 14.9 dB, a 3-dB bandwidth of 6.7 GHz, and 2.8 % power added efficiency (PAE). The T/R switch has an insertion loss from 3.5 to 4.9 dB, an isolation between transmit and receive ports better than 30 dB, and return losses at active ports less than -11 dB across the 57-66 GHz band. The input referred P1dB of the switch is 7.2 dBm.
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on (Volume:1 )
Date of Conference: 21-24 April 2008