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Structural and electrical characterization of carbon nanotube field-effect transistors fabricated by novel self-aligned growth method

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2 Author(s)
Rispal, L. ; Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt ; Schwalke, U.

In this work, we report on the fabrication of carbon nanotube field-effect transistors (CNTFETs) using a low-cost process based on chemical vapor deposition (CVD) growth of carbon nanotubes (CNTs). The CNT growth occurs on the whole wafer surface and is assisted by a sacrificial Ni/Al catalyst. The process contains neither complicated manipulations of the SWNTs nor multi-step lithography, avoiding the risk of misalignment. Each step of the fabrication is compatible with the traditional CMOS technology. The fabricated structures are unipolar CNTFETs working like P-MOSFETs with on/off ratios up to 3 times 106. We also report on the use of atomic force microscopy and its conductive extension to monitor the process and to provide structural and electrical information at the nanoscale.

Published in:

Design and Technology of Integrated Systems in Nanoscale Era, 2008. DTIS 2008. 3rd International Conference on

Date of Conference:

25-27 March 2008