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We studied dopant (boron) activation using flash lamp annealing (FLA) from a view of depth dependence in silicon substrate. As FLA is an annealing method by which temperatures of surface region only rump up and down rapidly, the dopants in deep region of wafer might be unable to be activated. We confirmed that carrier concentration in deep region activated by FLA was surely low compared with that by spike rapid thermal annealing (sRTA). However, the depth dependence of the carrier activation was resulted from the dopant concentration dependence and the degree of the damage recovery, not from the thermal budget dependence.