Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Faraday/Ion Mass Spectroscopy Dosimeter for Plasma Immersion Ion Implantation/Plasma Doping Processes of Semiconductor Manufacturing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Shu Qin ; Micron Technol., Inc., Boise, ID ; McTeer, A.

A new method and apparatus called Faraday/ion mass spectroscopy (IMS) dosimeter system is developed and can be used to determine the implanted impurity dose and profile for any molecular or multispecies-based plasma immersion ion implantation (PIII)/plasma doping (PLAD) processes. Good agreement between the boron doses measured by this method and those measured by SIMS has been demonstrated. Because of its direct, real-time, in situ, and close-loop control manner, this method shows a good controllability and repeatability for the PIII/PLAD processes.

Published in:

Plasma Science, IEEE Transactions on  (Volume:36 ,  Issue: 3 )