By Topic

Faraday/Ion Mass Spectroscopy Dosimeter for Plasma Immersion Ion Implantation/Plasma Doping Processes of Semiconductor Manufacturing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Shu Qin ; Micron Technol., Inc., Boise, ID ; Allen McTeer

A new method and apparatus called Faraday/ion mass spectroscopy (IMS) dosimeter system is developed and can be used to determine the implanted impurity dose and profile for any molecular or multispecies-based plasma immersion ion implantation (PIII)/plasma doping (PLAD) processes. Good agreement between the boron doses measured by this method and those measured by SIMS has been demonstrated. Because of its direct, real-time, in situ, and close-loop control manner, this method shows a good controllability and repeatability for the PIII/PLAD processes.

Published in:

IEEE Transactions on Plasma Science  (Volume:36 ,  Issue: 3 )