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Three-dimensional integration of silicon-on-insulator RF amplifier

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11 Author(s)
Chen, C.L. ; Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA ; Chen, C.K. ; Yost, D.-R. ; Knecht, J.M.
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An RF amplifier implemented by wafer-scale three-dimensional integration of three completely fabricated silicon-on-insulator wafers is demonstrated. The MOSFETs are on the top and bottom tier with middle-tier matching circuits. Measured amplifier performance agrees well with simulation and the footprint is approximately 40% smaller than the conventional 2D layout.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 12 )