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InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation

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9 Author(s)
V. Hurm ; Fraunhofer Inst. for Appl. Solid State Phys., Freiburg ; F. Benkhelifa ; R. Driad ; R. Losch
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A distributed amplifier for use as a modulator driver in next generation optical data communication systems has been manufactured using InP double-hetero bipolar transistor (DHBT) technology with an emitter size of 0.7 times 1 mum2. The amplifier achieved a gain of 21 dB and a 3 dB bandwidth of 120 GHz, resulting in a gain-bandwidth product of 1.35 THz. Clearly open 100 Gbit/s 231/1 non-return-to-zero pseudorandom bit sequence (NRZ PRBS) eye diagrams with an output voltage swing of 2.3 V have been measured.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 12 )