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We investigated the profile dependency of specific on-resistance (RonA) under high- temperature and high-current-density conditions for 600 V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the RonA characteristics because the profile affects the electron mobility (mue) in the drift region. The n-column profile was modulated by the column diffusion time (tdiff) in this experiment. The optimal tdiff achieved minimal RonA under the high-temperature and high-current-density conditions.