By Topic

The optimal profile design for SJ-MOSFET fabricated by double-ion-implantation and multi-epitaxial method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Ono, S. ; Discrete Semicond. Div., Toshiba Corp., Kawasaki ; Saito, W. ; Izumisawa, M. ; Sumi, Y.
more authors

We investigated the profile dependency of specific on-resistance (RonA) under high- temperature and high-current-density conditions for 600 V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the RonA characteristics because the profile affects the electron mobility (mue) in the drift region. The n-column profile was modulated by the column diffusion time (tdiff) in this experiment. The optimal tdiff achieved minimal RonA under the high-temperature and high-current-density conditions.

Published in:

Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on

Date of Conference:

18-22 May 2008