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Time-domain responses of wideband CMOS amplifiers using several inductive peaking techniques are presented. Transient performance considerations are described, including the effects of transistor parasitics on settling and edge rates. A combination of time-and frequency-domain performance is derived for a given bandwidth extension technique, and tradeoffs are discussed. Measured results for several high-speed high-gain single-stage amplifiers are presented in 0.18-mum CMOS, and a design strategy for multistage amplifiers is introduced. Finally, design and simulation results are presented for a multistage amplifier in 0.18-mum CMOS that attains a bandwidth of 22.7 GHz with 14.7-dB voltage gain, operates at 40 Gb/s, and consumes 93.6 mW.