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SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

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8 Author(s)
Thrivikraman, T.K. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA ; Jiahui Yuan ; Bardin, J.C. ; Mani, H.
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We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors' knowledge, these SiGe LNAs exhibit the lowest broadband noise of any Si-based LNA reported to date.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:18 ,  Issue: 7 )