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A 10–35 GHz Low Power Bulk-DrivenMixer Using 0.13 \mu m CMOS Process

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5 Author(s)
Chun-Lin Kuo ; Dept. of Electr. Eng. & Grad., Nat. Taiwan Univ., Taipei ; Bo-Jr Huang ; Che-Chung Kuo ; Kun-You Lin
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10-35 GHz doubly balanced mixer using a 0.13-mum CMOS foundry process is presented in this letter. Using the bulk-driven topology, the number of transistors of the doubly balanced mixer is reduced; thus the mixer can achieve a low supply voltage and low power consumption. This bulk-driven mixer exhibits a measured conversion gain of -1 plusmn 2 dB from 10 to 35 GHz of radio frequency (RF) with a fixed intermediate frequency (IF) of 100 MHz. The measured local oscillation (LO) to IF and RF-IF isolations are better than 30 dB. The chip area of the mixer is 0.6 times 0.4 mm2. The total power consumption included output buffer is only 6 mW.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:18 ,  Issue: 7 )