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Design of Broadband Highly Linear IQ Modulator Using a 0.5 \mu m E/D-PHEMT Process for Millimeter-Wave Applications

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1 Author(s)
Hong-Yeh Chang ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli

A broadband highly linear IQ modulator using a 0.5-mum enhancement/depletion-pseudomorphic high-electron mobility transistor process is presented in this letter. An innovative broadside/edge coupler is proposed to apply to the IQ modulator. The chip size is only 1times1 mm2, including radio frequency and baseband PADs. The sideband and local oscillation suppressions of the modulator are better than -33 and -15 dBc, respectively. At a carrier frequency of 60 GHz with a 64 quadrature amplitude modulation (QAM) modulation, the modulator demonstrates an error vector magnitude of within 3%, and an adjacent channel power ratio of better than -40 dBc. To the best of the authors' knowledge, this work demonstrates the best modulation quality with a 64 QAM modulation up to 60 GHz among all the reported reflection-type IQ modulators.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:18 ,  Issue: 7 )