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Phosphor-Free White Light From InGaN Blue and Green Light-Emitting Diode Chips Covered With Semiconductor-Conversion AlGaInP Epilayer

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3 Author(s)
Ray-Hua Horng ; Inst. of Precision Eng., Nat. Chung Hsing Univ., Taichung ; Pin Han ; Dong-Sing Wuu

A phosphor-free white lamp was fabricated using the InGaN-based blue and green light-emitting diode (LED) chips covered with semiconductor-conversion layer AlGalnP. The lamp can provide three bands: a 460-nm blue emission coming from the blue LED, a 555-nm green emission coming from the green LED, and 630-nm red emission coming from the excited AlGalnP epilayer. As 50 mA was injected into the white lamp at room temperature, the chromaticity coordinates and correlated color temperature (TC) are (0.338,0.335) and 5348 K, respectively. By separating injection current into blue and green LED chips, TC of lamp can be tuned from about 4000 K to 5400 K.

Published in:

IEEE Photonics Technology Letters  (Volume:20 ,  Issue: 13 )