Cart (Loading....) | Create Account
Close category search window

Optical Bistability in Active Semiconductor Microring Structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Alexandropoulos, D. ; Dept. of Inf. & Telecommun., Univ. of Athens, Athens ; Simos, H. ; Adams, M.J. ; Syvridis, D.

The spectral and power (I/O) bistable characteristics of active microring (MR) structures are analyzed theoretically. The theoretical formulation is based on the rate equation under the assumption of the z-independent optical power accounting for amplified spontaneous emission. The analysis is performed for MRs in both all-pass and add-drop configurations. The effect of cavity characteristics on the bistable performance are explored. Based on these the merits of the resonant nonlinearity enhancement are discussed and strategies for optimized bistable loops are outlined.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:14 ,  Issue: 3 )

Date of Publication:

May-june 2008

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.